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SEMI E90-1111 (designation update)
The scope of this Document is all grades of phosphoric etchants used in the semiconductor industry
All relevant trace contaminants should have an MDL determined from a regression analysis of a calibration curve that is equal to
Wafer near-edge geometry can significantly affect the yield of semiconductor device processing
This Guide contains the following component:
M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers StdPbc-0922 SEMI E90-1111 (designation update)This Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer. This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.
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